1 光纤通信技术和网络国家重点实验室,湖北 武汉430074
2 武汉光迅科技股份有限公司，湖北 武汉430074
文章综述了几种常用的铌酸锂波导的制作工艺，包括表面外扩散、金属内扩散、离子交换和质子交换，并分析、比较和总结了在不同工艺制作的条件下对铌酸锂光波导的性能造成的不同影响。目前，获得高质量光波导的主要途径是Ti扩散和质子交换。同时，文章对逐渐建立起的铌酸锂波导光学特性和结构特性之间的理论关系也进行了介绍。
铌酸锂 光波导 工艺 lithium niobate optical waveguide process
1 武汉光迅科技股份有限公司， 湖北 武汉 430074
2 华中科技大学武汉光电国家实验室， 湖北 武汉 430074
利用沿谐振腔体的一维数值模型着重研究了采用纳米压印技术制作的λ/4相移光栅分布反馈半导体激光器(QPS-DFB-LD)的光谱特性对谐振腔体参数的依赖性。通过将理论计算的结果与实测光谱对照，抽取了用于理论计算的QPS-DFB-LD模型参数。计算结果表明，相移区对中心位置的偏离量较小时(不超过10%)不会对器件的光谱特性造成很大影响，而仅仅是带来微小的蓝移和边模抑制比(SMSR)的变化。而当相移区对中心位置的偏离实际存在时，距离相移区较近的一端光输出功率增大而另一端光输出功率减小，并且距离相移区较近的一端输出光谱SMSR略高。器件两端蒸镀减反膜后所残留的反射率仍会使激射模在一定范围内产生漂移，并使其SMSR产生一定程度上的劣化。
激光器 模式稳定性 λ/4波长相移 纳米压印 分布反馈 光谱 边模抑制比 面反射 激光与光电子学进展
2011, 48(1): 011401
1 Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
2 Accelink Technologies Co. Ltd., Wuhan 430074, China
Frontiers of Optoelectronics
2010, 3(2): 194
Author Affiliations
Abstract
1 Department of Physics and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan 430072, China
2 Accelink Technologies Co., Ltd., Wuhan Research Institute of Post &
3 Telecommunications, Wuhan 430074, China
A 1.3-\mu m wavelength vertical-mesa ridge waveguide mulitple-quantum-well (MQW) distributed feedback (DFB) laser with high directly modulated bandwidth and wide operation temperature range is reported. With the optimization of the strained-layer MQWs in the active region, the surrounding graded-index separated-confinement-heterostructure waveguide layers, together with the optimization of the detuning and coupling coefficient of the DFB grating, high directly modulation bandwidth of 16 GHz at room temperature and wide working temperature range from ?40 to 85 \circ C are obtained. The mean time to failure (MTTF) is estimated to be over 2×10<sup>6</sup> h. The device is suitable as light source of high-bit-rate optical transmitters with small size and reduced cost.
半导体激光器 高速 无致冷 宽温度范围 140.5960 Semiconductor lasers 230.5590 Quantum-well, -wire and -dot devices 250.5960 Semiconductor lasers Chinese Optics Letters
2009, 7(9): 809
Author Affiliations
Abstract
1 Wuhan Accelink Technologies Co., Ltd, Wuhan Research Institute of Post and Telecommunication, Wuhan 430074
2 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
In this paper, we report a novel 1.3-μm uncooled AlGaInAs/InP multiple quantum well (MQW) ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide (RM-RWG) structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-μm, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80 Celsius degrees, respectively.
140.5960 semiconductor lasers 230.5590 quantum-well devices 250.0250 optoelectronics Chinese Optics Letters
2005, 3(8): 08466
